InGaN/GaN green multiple quantum well (MQW) nanopillar light emitting diodes (LEDs), similar to 150 nm in diameter and 700 nm in height, were fabricated by inductively coupled plasma etching using a Ni self-assembled nano-size mask. 2.5- and 7-fold improvement in the photoluminescence intensity was recorded for the 515 and 543 nm green LED sample, respectively. Since the size and the shape of both samples were similar, it is believed that the higher In content LEDs would produce more strain relaxation through the fabrication of a nanopillar. (c) 2012 Elsevier B.V. All rights reserved.