The effect of various Sb-terminated GaAs(001) templates on the growth of InAs was investigated by varying the As flux. The growth of InAs under In-rich growth conditions on Sb-terminated GaAs(001)-(2 x 3), (2 x 4) and (2 x 8) templates was demonstrated to occur in the Stranski-Krastanov (SK) growth mode, in contrast to the Sb-free case, where the growth process follows the Franck-van der Merwe (FM) growth mechanism. The observed antimony dependent change of growth mode from FM to SK is qualitatively explained by the decrease of the surface energy of the growing InAs layer caused by the segregation of Sb on the surface of the InAs(001). (C) 2013 Elsevier B.V. All rights reserved.