Directionally solidified Si-TaSi2 eutectic in situ composite was fabricated by Bridgman growth technique with a high temperature gradient. The microstructure and solid/liquid interface morphology evolvement were systematically investigated. The grown Si-TaSi2 presents typical semiconductor metal eutectic structure with the TaSi2 regularly and uniformly embedded into Si matrix. As the solidification rate increases from 6 to 150 mu m/s, the fiber diameter and eutectic spacing rapidly decrease, whereas the rod density increases. The eutectic spacing and solidification rate obey the relationship of lambda V-0.53=73.7 mu m(1.53)/s(0.53). Under the optimal solidification parameter (V=100 mu m/s), the fiber diameter is 1.37 mu m, average eutectic spacing is 3.83 mu m, and rod density is 3 x 10(6) rod/cm(2), which well satisfy the requirement of Spindt field emission arrays. Furthermore, the solid/liquid interface undergoes an evolvement of planar-shallow cell cell with the increase of solidification rate. (C) 2013 Elsevier B.V. All rights reserved.