Crystal growth of dilute BGaP alloys by solid-source molecular-beam epitaxy (MBE) equipped with electron beam evaporation system as the B source is investigated with changing growth condition of the growth temperature and the V/III ratio. The B composition for BGaP alloys increases with decrease of growth temperature and increase of III/V ratio. The B incorporation into the GaP matrix is difficult compared to other group-III atoms (Al or In) incorporations due to bonds in the matrix are highly strained calculated by valence force-field model. The possibilities of forming and conserving B-P bonds opportunity increased with decrease of growth temperature and increase of the V/III ratio. (c) 2013 Elsevier B.V. All rights reserved.