Type-II InAs/GaSb superlattices are promising for the absorption layers of mid-infrared sensors. Since GaSb substrates absorb infrared light, other substrates with high transparency are favorable for back-illuminated sensors. InP substrate is attractive due to high transparency, relatively small lattice mismatch and near thermal expansion coefficient to silicon CMOS read-out integrated circuit. In this study, type-II InAs/GaSb SLs were successfully grown on InP substrates. The crystalline and optical quality of SL improved as GaSb buffer layer thickness increased due to the reduction of threading dislocations. By using thick GaSb buffer layer, SL with strong PL intensity was successfully obtained. (c) 2013 Elsevier B.V. All rights reserved.