Journal of Crystal Growth, Vol.378, 400-403, 2013
Suppression of Andreev current due to transverse current flow in an InAs two-dimensional electrons
In a superconductor-normal-superconductor (SNS) structure, the effect of transverse current across the normal part on the transport through Andreev bound states (ABSs) has been examined. Here, a ballistic InAs two-dimensional electron system (2DES) is used as the N-layer to form ABSs. At the same time the 2DES has strong spin-orbit interaction, hence there should emerge the spin-Hall effect associated with the transverse current. We have observed strong reduction of characteristic oscillation in the conductance versus bias voltage, which may be attributed to spin polarization due to the spin-Hall effect. (c) 2013 Elsevier B.V. All rights reserved.
Keywords:Nanostructures;Molecular beam epitaxy;Semiconducting III-V materials;Superconducting materials