We report the growth conditions for InGaP epitaxial films and the characteristics of InGaP solar cells on a GaAs (100) substrate fabricated using solid-source molecular beam epitaxy. Photoluminescence and X-ray diffraction measurements indicate that a growth temperature of 480 degrees C is suitable for realizing high quality InGaP epitaxial growth with solid-source molecular beam epitaxy. The open circuit voltage of InGaP solar cells grown at 1.0 mu m/h is higher than that of the cells grown at 0.5 mu m/h. The highest conversion efficiency is obtained for an InGaP solar cell grown at 480 degrees C and a growth rate of 1.0 mu m/h. (c) 2012 Elsevier B.V. All rights reserved.