I-II-VI Ternary chalcopyrite semiconductors of Cu1-xZn1-ySe2-delta (Cu-Zn-Se) were successfully fabricated by the atmospheric pressure metal-organic chemical vapor deposition method for the first time. Four major peaks of (112), (220)/(204), (312)/(116), and (400), accompanied by three minor peaks of (103), (211) and (301) were observable in the X-ray diffraction spectra. In particular, the presence of those latter low-intensity peaks featured the formation of the chalcopyrite type Cu-Zn-Se compound. Typical absorption coefficients of the films produced were found to vary from 2.75 x 10 (4) cm(-1) to 5.75 x 10 (4) cm(-1) over all visible light range and from the same optical absorption spectra the energy gap of the material was extracted to be about 2.02 eV. Moreover, the photoluminescence measurement conducted at room temperature also exhibited a strong orange-colored emission line at 1.94 eV, which further confirmed that the Cu-Zn-Se ternary compound has been prepared. In addition, the cross-sectional and top-view scanning electron microscopy images characterized the fabricated Cu-Zn-Se compound as a polycrystalline film of thickness about 11.3 mu m and consisting of 12.5 mu m sized grains. (c) 2013 Elsevier B.V. All rights reserved.