InGaN single quantum wells (SQWs) grown on m-plane bulk GaN substrates show significant differences in peak emission wavelength when grown on substrates oriented nominally on-axis compared to substrates with small intentional misorientations (miscuts) towards the orthogonal -c-direction or a-direction. SQWs on substrates intentionally miscut toward the a-direction emit longer wavelengths than those with miscuts towards the -c-direction in a variety of identical growth conditions, while SQWs on nominally on-axis m-plane with pyramidal hillocks features display emission characteristics of both. These preliminary co-loaded growth studies may provide insight into broad or anomalous wavelength emission observed on nonpolar GaN-based visible light emitters and suggest opportunities for improving LED and laser diode device performance on this naturally occurring crystal plane. (c) 2013 Elsevier B.V. All rights reserved.