The epitaxial growth of photoconductive BaIn2Se4, which has orthorhombic structures, was first achieved through the hot wall epitaxy method. The electrical and optical characteristics of these epilayers were discussed. From the Hall effect measurement, in a high-temperature range of T > 150 K, the mobility decreased as a function of T-1 and its scattering was mainly due to the acoustic phonon mode of lattice vibrations through a deformation potential. In contrast, the mobility decreased in proportional to T-0.6 in a low-temperature range of T < 150 K and its decrease was caused by the impurity ion scattering. Also, from the relation between the reciprocal temperature and the carrier concentration, two dominant levels 136.9 and 27.9 meV were extracted out and they were estimated to be the activation energies of the shallow acceptor levels caused by the native defects of the upper edge of the valence band. In addition, from the optical absorption measurement, the bandgap variation of BaIn2Se4 epilayers extracted was well expressed by E-g(T)=2.626 eV-4.99 x 10(-3)T(2)/(T + 559). (C) 2013 Elsevier B.V. All rights reserved.