The Plasma Assisted Molecular Beam Epitaxy (PA-MBE) of InN nanorocls on Si- and C-faces of 6H-SiC substrates has been demonstrated. The optimum PA-MBE growth conditions for InN nanorods were with an indium beam equivalent pressure of similar to 2.0 x 10(-7) Tor and a growth temperature similar to 400 degrees C. The coalescence of InN nanorods to form a continuous InN layer has been achieved. The InN layers grown by MBE on Si-face 6H-SiC have In-polarity. (C) 2013 The Authors. Published by Elsevier B.V. All rights reserved.