LilriSe(2) polycrystalline material was successfully synthesized from melt and temperature oscillation method (MTOM). The crystalline phase was confirmed by powder X-ray diffraction pattern. Crack free LiInSe2 single crystal of size 12 mm diameter and 32 mm length was grown using two zone tubular resistive heated furnace by modified vertical Bridgman-Stockbarger method with steady ampoule rotation. The grown LiInSe2 crystal was subjected to single crystal XRD, inductively coupled plasma-optical emission spectroscopy (ICP-OES), positron annihilation spectroscopy (PAS), Hall effect and dielectric measurements. Single crystal XRD measurement confirms the orthorhombic crystal system. ICP-OES analysis gives the crystal composition as Li0.81In1.01Se2.18, The average lifetime 278.03 ps in PAS measurements corresponds to vacancy clusters present in LiInSe2 crystal. Hall effect measurement confirms the n-type semiconductor nature. The dielectric permittivity and dielectric loss were obtained to be 9.8 and 0.108 respectively by capacitance measurements at room temperature for the frequency of 2 MHz. (C) 2013 Elsevier B.V. All rights reserved.