Journal of Crystal Growth, Vol.389, 60-67, 2014
Large eddy simulation of industrial Czochralski Si crystal growth under transverse magnetic field
In the present study, a simulation of large diameter industrial Czochralski Si crystal growth is carried out using a combination of 2D axisymmetric global and 3D local models. The 2D global steady simulation is performed to obtain the thermal boundary conditions on the external wall of the crucible holder for 3D transient simulation under TMF. In the 3D model, the large eddy simulation (LES) turbulence model is adopted to obtain more accurate melt convection. The computed temperature distribution on the crucible wall agrees quite well with that from DNS simulation as well as experimental results in the absence of a magnetic field or with a vertical magnetic field. In order to clarify the effect of a transverse magnetic field (TMF), three different magnetic field intensities are used for simulation. The melt flow structures and temperature fluctuations under TMF are presented. The vortices at the corners of the crucible wall in the presence of weak or moderate magnetic field would not exist if axisymmetric thermal boundary conditions are used in the 3D model. The clamping effect of TMF is also studied. (C)2013 Elsevier B.V. All rights reserved
Keywords:Computer simulation;Heat transfer;Semiconducting silicon;Magnetic field assisted Czochralski method