The growing interest in modern energy-saving illuminants for general lighting, multimedia applications and automotive industry demands for alternative low-cost substrates for MOVPE LED growth. Nitride MOVPE growth is possible on the Si (111) plane, which makes Si substrates attractive as an alternative to sapphire substrates. A novel technology is presented using patterned Si (100) substrates, in which MOVPE-grown LED structures are fabricated on Si (111) facets tilted by 54.7 degrees. Structural and optical properties are discussed and correlated to epitaxial growth conditions, It is shown that crystal quality reaches already a reasonable level for preliminary LED operation. (C) 2014 Elsevier B.V. All rights reserved,