In this work, we study the influence of 3C-SiC/Si (111) template parameters (thickness, roughness and substrate miscut) on the GaN crystal quality and its strain state. For this, structures with an AIN nucleation layer and 1-4 mu m thick GaN layer have been grown by molecular beam epitaxy in order to select the best templates for the growth of thick GaN structures. Similar GaN structures have been grown directly on silicon for comparisons. The influence of the high silicon doping is confirmed on the enhancement of strain relaxation. Despite this limitation, a 5 pm thick crack-free continuous GaN structure (with 1 mu m silicon doped) has been successfully grown on the best selected template. Furthermore, the growth by metal organic chemical vapor deposition of structures with AIN and SiN inter layers and thick continuous GaN layers on Si (111), 3C-SiC/Si (111) and SoPSiC (silicon on polycrystalline silicon carbide) has been achieved in order to show the relative benefit of each approach in terms of layer quality and strain state. (C) 2014 Elsevier B.V. All rights reserved,