Low-frequency noise measurements, combined with the conventional techniques for the study of InGaN/GaN-based LEDs, make it possible to separate the contribution of conductive paths associated with the extended defect system (EDS) and point defects (PD) to non-radiative recombination processes. These measurements also can reveal physical mechanisms leading to the unpredictable failure of LEDs, such as non-uniform current distribution, local overheating, and presence of local InGaN regions with a reduced band gap width E-g. (C) 2014 Elsevier B.V. All rights reserved.