Journal of Crystal Growth, Vol.401, 633-635, 2014
Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers
We report molecular beam epitaxy of a ferromagnetic semiconductor (Ga,Mn)Sb, which is a single crystal without detectable second phases. We report also the details of magnetotransport properties of (Ga,Mn) Sb and the effects of electric fields on them. The difference between the properties observed here and properties of those reported earlier for a ferromagnetic semiconductor (Ga,Mn)As, provides information critical for further understanding of fundamental and device physics of ferromagnetic semiconductors. (C) 2013 Elsevier B.V. All rights reserved.
Keywords:Molecular beam epitaxy;Antimonides;Magnetic materials;Semiconducting III-V materials;Field effect transistors