In this work, we report an experimental investigation of the effect of TMIn pulse duration on the properties of InAlN/GaN heterostructures grown on c-plane sapphire by pulsed metal organic chemical vapor deposition. It is found that the TMIn pulse duration significantly influences the structural and electron transport properties of InAlN/GaN heterostructures. With the increase of TMIn pulse duration from 0.1 to 0.4 min at intervals of 0.1 min, the indium content increases from 74% to 18.8%, and a nearly lattice-matched indium content of 17% is obtained at a TMIn pulse duration of 0.3 min. Simultaneously, an increase of electron mobility from 989 to 1538 cm(2)/V s and a reduction of two-dimensional electron gas (2DEG) density from 2.69 x 10(13) to 1.17 x 10(13)cm(-2) accompanied with the increase of TMIn pulse duration. In the case of 0.3 min, a high electron mobility of 1428 cm(2)/V s and a 2DEG density of 1.73 x 10(13) cm(-2) are achieved for nearly lattice-matched lnAlN/GaN heterostructures, along with a smooth surface morphology with a root mean square roughness value of 0.21 nm observed by atomic force microscopy in a 2 x 2 mu m(2) scan area (C) 2014 Elsevier B.V. All rights reserved.