Journal of Crystal Growth, Vol.401, 753-757, 2014
Growth of silicon germanium by liquid phase diffusion with applied electric field
The effect of an applied electric field has been investigated in the growth of SiGe by Liquid Phase Diffusion. The applied electric field enhances the mass transport in the system through the phenomenon of electro-migration. The rate of growth in Liquid Phase Diffusion is diffusion limited by the rate of silicon diffusion across a germanium melt. The addition of electro-migration enhances this transport and leads to faster growth rates. Experiments were conducted with and without applied electric field. The samples processed with electric field show a dramatic change in mass transport in the melt. Silicon is rapidly mixed into the melt from the source material. Rapid polycrystalline growth of material is observed during the duration of the experiment. A significant increase in growth rate is observed. (C) 2013 Elsevier B.V. All rights reserved.