화학공학소재연구정보센터
Journal of Crystal Growth, Vol.401, 795-797, 2014
Crystal growth of Si2TeO5 by a double crucible Czochralski method
Single crystals of bismuth tellurite (Bi2TeO5) were grown by a double crucible Czochralski method at different pulling and rotation rates, ranging from 0.1 mm/h to 0.8 mmill and from 5 rpm to 20 rpm, respectively. The crystallized phase was verified by X-ray diffraction measurements, occurring structural defects were characterized, and the growth conditions were studied being determined the better parameters to growth good-quality single crystals with uniform pale yellow coloration. Optical band gap of 3.1 eV was determined from the optical transmission spectrum. (C) 2014 Elsevier B.V. All rights reserved.