A bulk of single crystals Ca3Ta(Al0.9Ga0.1)(3)Si2O14 (CTAGS) with ordered langasite structure in which 90% of gallium was replaced by aluminum was successfully grown by the Czochralski technique. X-ray power diffraction (XRPD) studies confirm that the CTAGS crystals possess a langasite structure. The lattice parameters are a=8.053 angstrom, c=4.938 angstrom, and V=277.36 angstrom(3). High resolution X-ray diffraction (HRXRD) analysis demonstrates that CTAGS single crystals are free of low angle boundaries. The piezoelectric coefficient d(11), dielectric constant epsilon(11)//epsilon(0), dielectric loss electromechanical coupling factor k(12), mechanical quality factor Q and electric resistivity of X-cut plate of CTAGS were measured from room temperature up to 900 degrees C. d(11), epsilon(11)//epsilon(0) and S-11(E), wore found to increase from 3.99 pC/N to 5.67 pC/N, from 13.7 to 15.4 and from 7.92 pm(2)/N to 8.87 pm(2)/N, respectively. In addition, the as-growth crystal is transparent in the wavelength range of 300-3200 nm and the highest transmittance exceeds 90%. (C) 2014 Elsevier B.V. All rights reserved.