Ab initio density functional theory (DFT) simulations were used to investigate an influence of an electric field, parallel to single and multilayer graphene, on its electron dispersion relations close to the K point. It was shown that for both single layer and AAAA stacking multilayer graphene under an influence of a parallel field the dispersion relations transform to nonlinear ones. The effect, associated with the hexagonal symmetry breaking, opens a new route to high speed transistors and logical devices working in the Dirac regime. The implementation of such a device is presented below. (C) 2014 Elsevier B.V. All rights reserved.