The dielectric properties of Bi2Ti2O7 were explored as a function of temperature and frequency. A comparison between the dielectric response of the well-known Bi1.5Zn0.92Nb1.5O6.92 (BZN) pyrochlore and the recently available Bi2Ti2O7 sintered ceramic revealed considerable differences, which indicate that chemical disorder, and not atomic displacement on its own, is chiefly responsible for the dielectric relaxation in bismuth pyrochlores. A low-frequency (<10kHz) and relatively high-temperature (similar to 125K) dielectric relaxation was observed in Bi2Ti2O7. An Arrhenius function was used to model the relaxation behavior and yielded an activation energy of 0.162eV and an attempt jump frequency of similar to 1MHz. This response is consistent with space charge polarization and not the result of dipolar or ionic disorder.