A good thermoelectric material should have a high Seebeck coefficient, a low electrical resistivity, and a low thermal conductivity. For conventional thermoelectric materials, however, increasing the Seebeck coefficient also leads to a simultaneous increase in the electrical resistivity. In this paper, a method of layer-by-layer deposition of MnSi1.7 film with high Seebeck coefficient and low electrical resistivity is developed. After deposition of the first MnSi1.7 sub-layer, the deposition process is interrupted for several minutes, and then continues for another MnSi1.7 sub-layer. Therefore, the MnSi1.7 film contains two sub-layers for one interruption, three sub-layers for two interruptions, and so on. It is found that the n-type MnSi1.7 film with two sub-layers has a higher Seebeck coefficient, -0.451 mV K-1, and a lower electrical resistivity, 19.4 mOhm-cm, at 483 K as compared to that of without deposition interruption, -0.152 mV K-1 and 44.3 mOhm-cm. The p-type MnSi1.7 film with three sub-layers also has a higher Seebeck coefficient, 0.238 mV K-1, and a lower electrical resistivity, 5.5 mOhm-cm, at 733 K in comparison with that of without deposition interruption, 0.212 mV K-1 and 10.4 mOhm-cm. (C) 2014 Elsevier B.V. All rights reserved.