Aluminum- (Al-) doped 6H-SiC crystals have been grown by the modified Lely method. Al(4)C(3) is used as Al source during the growth and was put into a separate container which was kept at temperatures about 250 K lower than the SiC source material. Highly aluminum doped F-type 6H-SiC crystals (AI-concentration ca. 1(.)10(19)cm(-3)) could be grown showing no microscopic aluminum-containing precipitates. The resistivity (at room temperature) is 1.4 Omega cm measured on a wafer, which is prepared from a region close to the seed crystal. The Hall scattering factor for holes r(H(p)) at temperatures T > 250 K is estimated to be smaller than one; its value at 700 K is determined to be about 0.5.