The applicability of the temperature oscillation method (TOM) for SiC was investigated experimentally using a prototype furnace which consists of two sections. It was experimentally shown that the selection of single nucleation of SiC was possible using TOM. In the present experiment, only beta -SiC with relatively large size could be grown. The micropipe density over an area of 5 x 5mm(2) of the grown crystals was less than 20 cm(-2).