The present paper focuses on the modeling analysis of the SiC CVD in the 5x3" Planetary Reactor (R) using silane and propane as precursors. The reactor design includes true hot wall conditions and an actively cooled inlet zone with an abrupt transition to the hot reactor environment. For getting a better insight into the SiC growth, we simulated the CVD process, varying the operating parameters in a wide range. The capability to achieve reasonably high growth rates with this reactor design is evaluated by the modeling study. CVD of SIC occurs without significant Si clustering under most growth conditions, even at high silane flow rates and wall temperatures lower than susceptor temperatures.