The influence of ee on the initial growth of SiC by low temperature solid-source molecular-beam epitaxy (SSMBE) on (111) and (100)Si was investigated by reflection high energy electron diffraction (RHEED). On both orientations Ge is passivating partially the surface, reducing the growth rate and increasing the grain size. However, according to the results by Auger electron spectroscopy (AES) Ge is not floating on the surface during proceeding carbonization.