Natural diamond samples have been implanted by Si ions at 900 degreesC at two different doses (3*10(17) and 1*10(18) ions/cm(2)). Layered structure is formed in the lower dose case, which is composed of thin stripes of epitaxial SiC and diamond. The higher dose implantation results in the formation of large, crystalline SIC grains, but leads to the amorphization of the diamond lattice in the top region.