A hydrogen termination of the (0001) and (000(1) over bar) 6H-SiC surfaces is achieved by a thermal treatment in ultra pure hydrogen. This results in unreconstructed and quasi-bulk terminated surfaces as demonstrated by a (1x1) LEED patterns which are stable in air. Photoelectron spectra show only bulk related Si 2p and C:ls lines and give no indication of any contamination. Using Fourier transform infrared spectroscopy (FTIR) in the attenuated total reflection (ATR) configuration SI-H stretching modes around 2130 cm(-1) have been observed in p-polarization but not in s-polarization. This indicates that the Si-H bonds are oriented perpendicular to the surface. Electronically, hydrogenation leads to a complete passivation of the surface with no pinning of the Fermi level. After annealing at 800 degreesC in UHV the hydrogen completely desorbs and the surface periodicity changes from (1x1) to (root 3x root3)R30 degrees. The photoemission spectra of this (root 3x root3)R30 degrees structure are characteristic for a surface with Si adatoms in T(4) configuration which is formed via a disproportionation of SiC at the surface.