Sublimation grown epitaxial layers as well as crystals have been investigated by optical microscopy (NDIC: Nomarski differential interference contrast), atomic force microscopy and photoluminescence. Crystal growth was performed on the C-terminated surface of 6H seeds of 30 mm diameter. In addition seeds with off-orientations a few degrees towards < 11(2)over bar 0 > and <1(1)over bar 00 > respectively were used. Even on such seeds step flow growth can only he maintained using source material with Si excess. Step bunching is more pronounced when using a stoichiometric source. In contrast to off-oriented layers the on-axis grown material always exhibited a coalescence of individual islands. Growth spirals could not be observed on (000(1)over bar) faces.