We report 6H-SiC samples implanted with hydrogen at a dose of 1x10(17) H(+) atom/cm(2), using a 1.0 MeV proton beam. Implantation-induced changes in vibration modes were investigated by backscattering Raman spectroscopy, Results have been discussed in the light of the extended zone scheme and some of the forbidden Br modes tentatively assigned. After 950 degreesC annealing during 1 hr, incomplete crystal recovery is found.