화학공학소재연구정보센터
Materials Science Forum, Vol.353-356, 311-314, 2001
Micropipe closing via thick 4H-SiC epitaxial growth involving structural transformation of screw dislocations
In this paper micropipe closing and structural transformation of screw dislocations were studied using selective defect etching techniques. We confirmed that some micropipes in substrates were closed via gas phase 4H-SiC epitaxial growth, and that micropipe closing involves structural transformation from a hollow core defect to several non hollow core dislocations. Depth analysis revealed that mast of the micropipe closings occurred in the initial stage of epitaxial growth.