Materials Science Forum, Vol.353-356, 323-326, 2001
Self diffusion in SiC: the role of intrinsic point defects
We apply an ab initio method to study the diffusion of intrinsic interstitials and vacancies in 3C-SiC. The structure and the energetics of the relevant transient complexes are calculated. We present possible migration paths and the corresponding barriers and discuss the dominant channels for self-diffusion.