It is shown that micro-Raman spectroscopy is a sensitive tool to probe the effect of subsurface and implantation damage in SiC. The investigation of subsurface damage is based on the determination of the free carrier density profile in n-type material. The investigation of implantation damage calls for an investigation of the activation of the 1-phonon DOS, combined with a study of the broadening and shift of the first-order Raman modes.