It is demonstrated that beryllium (Be) is a strong diffusing species in SiC. Two acceptor-like defect centers are detected in Be-implanted, p-type 4H-SiC epilayers; their ionization energies are: DeltaE(Be(1)) = (535-/585) meV and DeltaE(Be(2)) = (925/1008) meV. Be(1)(-)center is thermally stable up to 620K, while Be(2)-center is thermally unstable. In Be-implanted n-type 4H-SiC a series of peaks is observed in the DLTS spectra; among the observed peaks the K(1)-center is not yet described in the literature.