Samples of 4H-SiC grown by cold-wall CVD have been investigated with the use of transport methods in the temperature range 35 K to 850 K. Our best sample had an electron mobility of 12400 cm(2)/Vs at 50 K. We describe the temperature dependence of the electron density and mobility and discussed the effects of the two inequivalent lattice sites of the nitrogen levels, including valley-orbit splitting. At room temperature, the density dependence of Electron mobility was established, described theoretically and compared with the results of other authors. The calculated asymptotic value is about 930 cm(2)/Vs for weakly doped samples.