Materials Science Forum, Vol.353-356, 495-498, 2001
Donor densities and donor energy levels in 3C-SiC determined by a new method based on Hall-effect measurements
Without any assumption of the number of donor species, the densities and energy levels of donors in undoped 3C-SiC grown from hexamethyldisilane (HMDS; Si(2)(CH(3))(6)) are precisely determined by a graphical peak analysis method proposed here, using the temperature dependence of the majority-carrier concentration obtained from Hall-effect measurements.
Keywords:donor density;donor energy level;free carrier concentration spectroscopy;(FCCS);graphical peak analysis;Hall effect;hexamethyldisilane;temperature dependence of majority-carrier concentration