We report on the electron paramagnetic resonance observation of deep AL in 4H-SiC. EPR spectra due to deep Al acceptors in two positions in the lattice was observed. In both cases symmetry of the center is almost axial along c-axis. Deep Al accepters in 4H-SIC consist of Al atom in Si position next to carbon vacancy along c-asis. EPR of deep B in as-grown SiC doped during growth was observed for the first time.