Recent progress in SiC epitaxial growth, ion implantation, and MOS technologies made in the authors' group are described. Thick (> 30 mum) SiC epilayers grown by improved cold-wall CVD show a background doping level of 1 similar to 5x10(14) cm(-3) with a low trap concentration of 3 similar to 4x10(12) cm(-3). Specular SiC epilayers have been grown at a growth rate over 15 mum/h by a chimney-type cm CVD reactor at 1700 degreesC. High-dose P(+) and Al(+) implantations have resulted in low sheet resistances of 105 Omega/square and 3600 Omega/square, respectively. Successful MeV Al(+) and B(+) implantations are demonstrated. A high channel mobility of 96 cm(2)/Vs for 4H-SiC(11 (2) over bar0) MOSFET originates from the much lower interface state density near the conduction band edge.