Electrochemical etching experiments in combination with C-V measurements: of 6H and 4H-SiC p-type material can be used to determine the doping profile and the evaluation of the types and distribution of crystal defects. Dislocation-related etch-l,its appeared on the etched surfaces due to a preferential etching process. Doping profiles were obtained for etched depths down to 84 mum. The experiments were conducted in a simple commercial apparatus and the reproducibility of the method was demonstrated.