We report on the electrical characteristics of an implanted n-base GTO thyristor made from 4H-SiC. The fabricated GTO shows a forward blocking voltage of 250 V and an on-state voltage drop of 8-10 V at room temperature. An implanted n-base sheet resistance of between 40 and 50 k Omega /sq has also been measured. The doping profile of the implanted n-base layer determined from C-V measurements indicates only 5 percent of the implanted phosphorus was activated under the implant and anneal conditions used. The implanted n-base GTO also exhibits a current limitation of approximately 2 A/cm(2), above which the forward on-state voltage increases more rapidly. An epitaxial n-base GTO in 4H-SiC has also been fabricated and is compared with the implanted n-base GTO.