Annealing of defects in proton irradiated InAs samples has been investigated by positron lifetime and Doppler-broadening measurements. The as grown samples contain defects with a positron lifetime of about 292 +/- 10 ps. The observed lifetime originates from a monovacancy-type defect, most probably a single vacancy and some other defect species. The concentration of these defects is in the range 10(17) cm(-3). Upon irradiation the observed intensity of this lifetime component increases. Moreover, during annealing the lifetime spectra show a new lifetime component with a value of about 340 +/- 20 ps, which have to be attributed to divacancy-type defects. After annealing at 600 degreesC the as grown values of the positron parameter are reached.