Recently, a room temperature electrically induced metastability in semi-insulating (SI)-GaAs has been reported in which the normally high resistance state of SI-GaAs converts into a low resistance state when breakdown electric fields are applied to the metal/SI-GaAs/metal system. The low resistance state persists when the electric field is lowered below the breakdown bias and as such may thus be considered as metastable state of the material. To clarify whether the high field breakdown has its origins in some atomic configurational change induced through high energy electron collisions we have employed positron lifetime spectroscopy. Lifetime spectra that have been taken at the same bias in both the high current and low current phases show that the positron lifetime in the metastable state has no change within the experimental error from that of the normal state, thus suggesting that the metastability is most likely of purely electronic origin.