In this paper we present lasing delay time, optical and electrical low-frequency noise, and correlation factor between optical and electrical fluctuations for multiple-quantum-well gain-coupled buried-heterostructure distributed-feedback laser diodes with thyristor-type blocking layer. The investigated laser diodes had very low threshold current (6-8 mA) and lasing delay time (<0,3 ns) at higher pulse currents (>100 mA). The investigated lasers exhibited thyristor-like turnon at currents >100 mA.