In this paper, we theoretically examine the possible quantum well structures that may fulfill the criterion to achieve a terahertz (THz) laser devices. Our calculations are based on well-developed effective-mass theory that accounts for valence-band mixing as well as the mismatch of band parameters and dielectric constants between well and barrier materials. The advantage of the model is that the ground and excited states of acceptors confined in strained quantum well structures can be calculated. Therefore, by calculating the splitting of the acceptor ground states in strained InxGa1-xAs/GaAs and Si1-xGex/Si quantum well structures versus well widths and alloy concentrations, our results provide a guiding to design the structures that inky be suitable for realizing THz stimulated emissions in a range between 2 and 8 THz.