Large 6H-SiC crystal boules with single crystal area up to 3 inches in diameter were grown using a sublimation physical vapor transport (PVT) technique and high quality 6H wafers of 3 inches in diameter were successfully fabricated from these crystal boules. Micropipes and other crystalline defects in the 3-inch 6H wafers were characterized and analyzed. Extremely low micropipe and screw dislocation densities were observed in the newly expanded single crystal area of some 3-inch wafers. The growth parameters that affect the quality of SiC crystals are also discussed.