The growth of 4H single crystal SiC of 35 mm in diameter by solid phase epitaxy process is demonstrated and discussed. A seed of 35 mm in diameter and 500 Am in thickness is firmly joined to a sintered 3C polyerystalline wafer of 400 mum thick. After annealing at temperatures over 2500 K, there is a progressive solid transformation of the 3C polycrytal to the single crystal form of the seed. Characterizations by optical microscopy and White Beam X-Ray synchrotron topography reveals the progressive alignment of the polycrystal.