Metallic wafer bonding between Sic wafers and transfer of high quality 4H Sic thin film using the Smart-Cut(R) process is demonstrated. These substrates, developed for vertical Sic power devices applications such as Schottky diodes, involve metallic wafer bonding between Sic wafers as well as transfer of high quality thin film onto low cost Sic substrates. These substrates are called QuaSiC substrates. CVD Sic epitaxial regrowth compatibility at 1450degreesC as well as first bonding interface electrical transparency by I(V) were verified. QuaSiC substrates have been physically characterized using XTEM and Low Temperature PL spectroscopy. The first results presented here suggest that thin film substrates obtained with the Smart-Cut(R) process can be an alternative substrate source for the development of SiC power electronic devices.