In this paper we propose a novel growing method of SiC single crystal, developed to enable the continuous growth of SiC bulk single crystal with no micropipe. In this method SiC nutritious species are synthesized on the surface of 6H-SiC seed crystal, through carbothermal reduction of ultrafine particle precursor composed of SiO2, C sources, to grow the epitaxial bulk single crystal rapidly. The reliability of this method was verified by XRD, microscopic Raman spectra and polarized optical micrograph. The temperature dependence of crystal defects in grown layer was also investigated.